|
|
红外与毫米波学报 2004
LOW-LOSS CPW LINE ON LOW-RESISTIVITY SILICON
|
Abstract:
Low loss and high performance RF/microwave CPW(coplanar waveguide)were fabricated on thicker porous silicon(PS)/ oxidized porous silicon(OPS) substrate associated with polyimide coating to improve smoothness. PS films with different thickness were formed on both N and P-type Si, and the CPW losses on them were discussed. The CPW loss on thick PS is intimately close to quartz, and much lower than the combined substrate of poly-Si / oxidized poly-Si growing on a 2000Ω·cm Si wafer. The insertion loss on PS was lower than 5dB/1.2cm in the range of 0-33GHz, and less than 7.5dB/1.2cm in 33-40GHz.
