%0 Journal Article
%T LOW-LOSS CPW LINE ON LOW-RESISTIVITY SILICON<br>低阻硅衬底上形成的低损耗共平面波导传输线
%A GE Yu-Ping
%A GUO Fang-Min
%A WANG Wei-Ming
%A XU Xin YOU Shu-Zhen
%A SHAO Li
%A YU Shao-Xin
%A ZHU Zi-Qiang
%A LU Wei
%A <br>葛羽屏
%A 郭方敏
%A 王伟明
%A 徐欣
%A 游淑珍
%A 邵丽
%A 于绍欣
%A 朱自强
%A 陆卫
%J 红外与毫米波学报
%D 2004
%I Science Press
%X Low loss and high performance RF/microwave CPW(coplanar waveguide)were fabricated on thicker porous silicon(PS)/ oxidized porous silicon(OPS) substrate associated with polyimide coating to improve smoothness. PS films with different thickness were formed on both N and P-type Si, and the CPW losses on them were discussed. The CPW loss on thick PS is intimately close to quartz, and much lower than the combined substrate of poly-Si / oxidized poly-Si growing on a 2000Ω·cm Si wafer. The insertion loss on PS was lower than 5dB/1.2cm in the range of 0-33GHz, and less than 7.5dB/1.2cm in 33-40GHz.
%K RF/microwave
%K PS/OPS
%K CPW(coplanar waveguide)
%K insertion loss<br>共平面波导
%K 硅衬底
%K 厚膜
%K 插入损耗
%K 传输线
%K CPW
%K 高阻硅
%K GH
%K 微波
%K 射频
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2D9ED19344AB6B1D&yid=D0E58B75BFD8E51C&vid=EA389574707BDED3&iid=94C357A881DFC066&sid=FA88DCCE84EA0A56&eid=3356A7630A93A219&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=7