PREPARATION OF (Ba0.5Sr0.5)TiO3 THIN FILM BY SOL-GEL TECHNIQUE AND ITS CHARACTERISTICS
溶胶—凝胶法制备BST铁电薄膜及性能研究

(Ba0.5Sr0.5)TiO3 ferroelectric t hin films were prepared by Sol-Gel processing. Films with thickness of 160nm t reated at 700℃ for 1h showed pure perovskite structure and good dielectric, ins ulating properties, i.e. a dielectric constant of 225, a dielectric loss of 0.04 4, a leakage current density of 8.0×10－8A/cm2. The leakage current density was found to depend on the annealing temperature. The measurement of the J-V characteristics on films indicated the conduction process to be bulk- limited.