PREPARATION AND ELECTRICAL PROPERTIES OF Bi2VO5.5 THIN FILM
Bi2VO5.5铁电薄膜的制备及电学性质研究

Ferroelectric bismuth vanadate thin films were successfully fabricated on n-type Si (100) substrate by sol-gel method. The microstructures of the films were investigated by X-ray diffraction and Atomic force microscopy. The results indicated that B2VO5.5 thin films showed a good match with the n-Si substrate and a high c-axis preferred orientation with a uniform grain distribution. The investigation on the electrical properties of B2VO5.5 thin films indicated that B2VO5.5 thin films showed good capacitance-voltage characteristics, and the memory window was larger than 0.4 V with the gate voltage ±4 V. The leakage current density was about 5×10-8 Acm-2 when the applied voltage was 3.2 V. The dielectric constant and dielectric loss measured at 1 kHz were 95 and 0.22 respectively. All the results indicate that Bi2VO5.5 thin films have potential applications for ferroelectric memory devices.