%0 Journal Article
%T PREPARATION AND ELECTRICAL PROPERTIES OF Bi2VO5.5 THIN FILM<br>Bi2VO5.5铁电薄膜的制备及电学性质研究
%A zhangzhenlun
%A Denghongmei
%A Guoming
%A Yangpingxiong
%A <br>张振伦
%A 邓红梅
%A 郭鸣
%A 杨平雄
%J 红外与毫米波学报
%D 2010
%I Science Press
%X Ferroelectric bismuth vanadate thin films were successfully fabricated on n-type Si (100) substrate by sol-gel method. The microstructures of the films were investigated by X-ray diffraction and Atomic force microscopy. The results indicated that B2VO5.5 thin films showed a good match with the n-Si substrate and a high c-axis preferred orientation with a uniform grain distribution. The investigation on the electrical properties of B2VO5.5 thin films indicated that B2VO5.5 thin films showed good capacitance-voltage characteristics, and the memory window was larger than 0.4 V with the gate voltage ±4 V. The leakage current density was about 5×10-8 Acm-2 when the applied voltage was 3.2 V. The dielectric constant and dielectric loss measured at 1 kHz were 95 and 0.22 respectively. All the results indicate that Bi2VO5.5 thin films have potential applications for ferroelectric memory devices.
%K bismuth vanadate films
%K metal-ferroelectric-semiconductor(MFS) structure
%K sol-gel
%K electrical property<br>钒酸铋薄膜
%K 金属/铁电薄膜/半导体结构
%K 溶胶凝胶
%K 电学特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=B1C62B991B83494FD081249C4AB8E159&yid=140ECF96957D60B2&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=FBA00558C57D9C11&eid=1D01216AD76577EC&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0