THE MEMORY EFFECT OF PC TYPE HgCdTe DETECTORS
PC型HgCdTe探测器的记忆效应

By measuring the dynamic response in PC type HgCdTe detectors, it was found that at the operating temperature (77K), after laser irradiation, the conductivity of detectors changes (showing memory), and responsibility is raised up. This effect will remain unchanged for a long term at the operating temperature. When the temperature is raised to room temperature, the memory function disappears. Various measurement results were given on this effect and its mechanism was analyzed in this paper.