%0 Journal Article
%T THE MEMORY EFFECT OF PC TYPE HgCdTe DETECTORS<br>PC型HgCdTe探测器的记忆效应
%A LU Qi
%A Sheng
%A JIANG Zhi
%A Ping
%A LIU Ze
%A Jin
%A SHU Bo
%A Hong
%A <br>陆启生
%A 蒋志平
%J 红外与毫米波学报
%D 1998
%I Science Press
%X By measuring the dynamic response in PC type HgCdTe detectors, it was found that at the operating temperature (77K), after laser irradiation, the conductivity of detectors changes (showing memory), and responsibility is raised up. This effect will remain unchanged for a long term at the operating temperature. When the temperature is raised to room temperature, the memory function disappears. Various measurement results were given on this effect and its mechanism was analyzed in this paper.
%K PC type HgCdTe detector
%K memory effect
%K dynamic response
%K annealing<br>记忆效应
%K 动态响应
%K 汞镉碲探测器
%K 红外探测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=9B47D813AB9CBB1D&yid=8CAA3A429E3EA654&vid=BCA2697F357F2001&iid=E158A972A605785F&sid=E3094127AA4ABC1A&eid=CA9ED1AB4D9E3E04&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=11&reference_num=4