USE OF PHOTOREFLECTANCE SPECTROSCOPY IN THE STUDY OF GaAs_(1-x)Sb_x/GaAs EPITAXIAL LAYER
光调制反射谱用于研究MBEGaAs1—xSbx／GaAs外延膜

Photoreflectance (PR) lineshapo of quantum wells is discussed simply. The MBE GaAs_(1-x)Sb_x/GaAs hotorostructures and strained layer multiple quantum wells have been investigated by means of PR measurement. The advantages of the photoreflectance spectroscopy in the study of MBE epitaxial film are found in this paper.