%0 Journal Article
%T USE OF PHOTOREFLECTANCE SPECTROSCOPY IN THE STUDY OF GaAs_(1-x)Sb_x/GaAs EPITAXIAL LAYER<br>光调制反射谱用于研究MBEGaAs1—xSbx／GaAs外延膜
%A CHI JIANGANG ZHAO WENQIN LI AIZHEN
%A <br>池坚刚
%A 赵文琴
%J 红外与毫米波学报
%D 1991
%I Science Press
%X Photoreflectance (PR) lineshapo of quantum wells is discussed simply. The MBE GaAs_(1-x)Sb_x/GaAs hotorostructures and strained layer multiple quantum wells have been investigated by means of PR measurement. The advantages of the photoreflectance spectroscopy in the study of MBE epitaxial film are found in this paper.
%K Photoreflectance spectroscopy
%K epitaxial film<br>光调制反射谱
%K 外延膜
%K 分子束外延
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=D6CAB7F8BABA1CD55C1516B8B032E66A&yid=116CB34717B0B183&vid=F3090AE9B60B7ED1&iid=0B39A22176CE99FB&sid=D767283A3B658885&eid=4BB057F167CF3A60&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0