MOBILITY SPECTRUM ANALYSIS OF MULTI CARRIER SYSTEM IN HgCdTe
HgCdTe多载流子体系的迁移率谱分析

The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility specrum analysis (MSA) for n type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agree well with the theoretical analysis.