%0 Journal Article
%T MOBILITY SPECTRUM ANALYSIS OF MULTI CARRIER SYSTEM IN HgCdTe<br>HgCdTe多载流子体系的迁移率谱分析
%A GUI Yong
%A Sheng
%A ZHENG Guo
%A Zhen
%A GUO Shao
%A Ling
%A CHU Jun
%A Hao
%A <br>桂永胜
%A 郑国珍
%J 红外与毫米波学报
%D 1998
%I Science Press
%X The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility specrum analysis (MSA) for n type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agree well with the theoretical analysis.
%K mobility spectrum
%K multi
%K carrier system
%K HgCdTe<br>迁移率谱
%K 多载流子体系
%K 汞镉碲
%K 红外探测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=BB7A7297977F44D9CE95E6C6A1F7AA16&yid=8CAA3A429E3EA654&vid=BCA2697F357F2001&iid=94C357A881DFC066&sid=170CE8B011EA4FD9&eid=2E01F39B6CBD53DE&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2