OSCILLATOR STRENGTH OF INTERSUBBAND TRANSITION IN N TYPE AlAs/GaAlAs QUANTUM WELL FOR THE NORMAL INCIDENT ABSORPTION
n型AlAs／GaAlAs量子阱子带间正入射吸收跃迁振子强度

For the n type semiconductor quantum well with anisotropic electron effective mass, the analytical expressions of oscillator strength of intersubband transition including both bound to bound and bound to extended excited states for the normal incident radiation were given. Taking the AlAs/Ga 1- x Al x As as an example, the influences of the growth direction of the quantum well and the well width on the absorption wavelength and the oscillator strength were investigated.