%0 Journal Article
%T OSCILLATOR STRENGTH OF INTERSUBBAND TRANSITION IN N TYPE AlAs/GaAlAs QUANTUM WELL FOR THE NORMAL INCIDENT ABSORPTION<br>n型AlAs／GaAlAs量子阱子带间正入射吸收跃迁振子强度
%A Xu Wenlan
%A <br>徐文兰
%A 傅英
%J 红外与毫米波学报
%D 1997
%I Science Press
%X For the n type semiconductor quantum well with anisotropic electron effective mass, the analytical expressions of oscillator strength of intersubband transition including both bound to bound and bound to extended excited states for the normal incident radiation were given. Taking the AlAs/Ga 1- x Al x As as an example, the influences of the growth direction of the quantum well and the well width on the absorption wavelength and the oscillator strength were investigated.
%K quantum well
%K infrared detector
%K normal incident absorption
%K oscillator strength<br>量子阱，红外探测器，正入射吸收，振子强度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=76DDD033259936E54C75908AD8B22889&yid=5370399DC954B911&vid=7801E6FC5AE9020C&iid=0B39A22176CE99FB&sid=7AA74D31F1FF2DCE&eid=08805F9252973BA4&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=7