Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS
Hg1—xCdxTe材料中的Te离子空位共振能级

The MOVPE Hg 1-xCd xTe epitaxial film, LPE Hg 1-xCd xTe epitaxial film and Hg 1-xCd xTe bulk wafers grown by ACRT-Bridgman and Te solvent methods were measured by means of Raman microscopy in the room temperature. In all the experimental specimen, the micro-Photoluminescence emission centered above the bottom of Hg 1-xCd xTe conduction band about 1.5eV were observed for the first time. It is confirmed that the micro-photoluminescence was induced by the Te ion vacancy resonance level.