%0 Journal Article
%T Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS<br>Hg1—xCdxTe材料中的Te离子空位共振能级
%A HUANG Hui
%A XU Jing-Jun ZHANG Cun-Zhou ZHANG Guang-Yin
%A <br>黄晖
%A 许京军
%J 红外与毫米波学报
%D 2003
%I Science Press
%X The MOVPE Hg 1-xCd xTe epitaxial film, LPE Hg 1-xCd xTe epitaxial film and Hg 1-xCd xTe bulk wafers grown by ACRT-Bridgman and Te solvent methods were measured by means of Raman microscopy in the room temperature. In all the experimental specimen, the micro-Photoluminescence emission centered above the bottom of Hg 1-xCd xTe conduction band about 1.5eV were observed for the first time. It is confirmed that the micro-photoluminescence was induced by the Te ion vacancy resonance level.
%K Hg1-x CdxTe materials
%K Te ion vacancies
%K micro-photoluminescence
%K Raman microscopy<br>共振能级
%K Hg1－xCdxTe材料
%K Te离子空位
%K 显微荧光
%K 拉曼显微镜
%K 薄膜结构
%K 碲镉汞材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=43787771B9C93546&yid=D43C4A19B2EE3C0A&vid=BC12EA701C895178&iid=CA4FD0336C81A37A&sid=DB817633AA4F79B9&eid=340AC2BF8E7AB4FD&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=11