THE STUDY OF TWO KINDS OF SURFACE PASSIVATION WAYS FOR n-HgCdTe PHOTOCONDUCTOR DEVICE
n-HgCdTe光导器件的两种表面钝化研究

The CdTe film was deposited at low temperature by Ar beam sputtering deposition technique. The anodic oxide film of the HgCdTe crystal was fabricated by use of electrochemical method. The CdTe film and the anodic oxide film were used for passivation of n HgCdTe photoconductor device. The resistance and the device performance of the two kinds of devices were measured. It was proved that the quality of the CdTe/HgCdTe interface can meet the requirements of the passivation of photovoltaic HgCdTe infrared focal plane arrays.