%0 Journal Article
%T THE STUDY OF TWO KINDS OF SURFACE PASSIVATION WAYS FOR n-HgCdTe PHOTOCONDUCTOR DEVICE<br>n-HgCdTe光导器件的两种表面钝化研究
%A ZHOU Yong Dong
%A FANG Jia Xiong
%A TANG Ding Yuan
%A <br>周咏东
%A 方家熊
%A 汤定元
%J 红外与毫米波学报
%D 2000
%I Science Press
%X The CdTe film was deposited at low temperature by Ar beam sputtering deposition technique. The anodic oxide film of the HgCdTe crystal was fabricated by use of electrochemical method. The CdTe film and the anodic oxide film were used for passivation of n HgCdTe photoconductor device. The resistance and the device performance of the two kinds of devices were measured. It was proved that the quality of the CdTe/HgCdTe interface can meet the requirements of the passivation of photovoltaic HgCdTe infrared focal plane arrays.
%K device surface passivation
%K CdTe
%K HgCdTe
%K Ar
%K beam sputtering deposition<br>器件表面钝化
%K CdTe
%K HgCdTe
%K Ar~
%K 束溅射沉积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=E80B095ADB45FB11AD3D119646A54C1E&yid=9806D0D4EAA9BED3&vid=2A8D03AD8076A2E3&iid=38B194292C032A66&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0