ELECTRICAL BEHAVIOR OF LIGHT MODULATOR IN GaAS/GaAlAs SINGLE QUANTUM WELL STRUCTURE
GaAs／GaAlAs单量子阱光调制器电学行为

The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.