%0 Journal Article
%T ELECTRICAL BEHAVIOR OF LIGHT MODULATOR IN GaAS/GaAlAs SINGLE QUANTUM WELL STRUCTURE<br>GaAs／GaAlAs单量子阱光调制器电学行为
%A Zhou Jie
%A Feng Songlin
%A Lu Liwu
%A Sun Jinglan
%A <br>周洁
%A 封松林
%J 红外与毫米波学报
%D 1994
%I Science Press
%X The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.
%K quantum well
%K admittance spectroscopy
%K GaAs/GaAlAs
%K subband<br>量子阱
%K 导纳谱
%K 子能带
%K 光调制器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=AD5C869CC34EEFE90F09EFB8231D1706&yid=3EBE383EEA0A6494&vid=FC0714F8D2EB605D&iid=CA4FD0336C81A37A&sid=8BD23BD67BF01A5C&eid=68D88C2FCF9C3098&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=1