TRANSIENT RESPONSE OF HgCdTe PC AND SPRITE DETECTORS
HgCdTe光导及扫积型器件的瞬态响应

The transient decay response of HgCdTe PC and SPRITE detectors have been calculated and observed. The results of theory and experiment are in good agreement. At high bias fields, the decay processes of PC and SPRITE detectors are with ramp and rec- tangular waveforms, respectively. According to the curve of decay process, the excess carri- er ambipolar mobility can be determined.