%0 Journal Article
%T TRANSIENT RESPONSE OF HgCdTe PC AND SPRITE DETECTORS<br>HgCdTe光导及扫积型器件的瞬态响应
%A Li Yanjin
%A Zhu Longyuan
%A Fang Jiaxiong
%A <br>李言谨
%A 朱龙源
%J 红外与毫米波学报
%D 1992
%I Science Press
%X The transient decay response of HgCdTe PC and SPRITE detectors have been calculated and observed. The results of theory and experiment are in good agreement. At high bias fields, the decay processes of PC and SPRITE detectors are with ramp and rec- tangular waveforms, respectively. According to the curve of decay process, the excess carri- er ambipolar mobility can be determined.
%K photoconductors
%K excess carriers
%K ambipolar mobility<br>光电导
%K 载流子
%K 瞬态响应
%K HgCdTe
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=0D9976793039CF271F9B002318DC5425&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=273ADA1BCEFE8C00&eid=44A4891E33BFF455&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=3&reference_num=1