THE DENSITIES OF VIBRATIONAL STATE FOR CONFIGURATION MODELS OF DEEP LEVEL NATIVE DEFECT EL2 IN GaAs
砷化镓中EL2深能级结构模型的晶格振动态密度

Two current configuration models of deep level native defect EL2 in GaAs, i.e. pair model As_(Ga)-As_i of Bourgoin and ternary complex As_(Ga)V_(As)V_(Ga) of Zou Yuanxi are in- troduced. The densities of vibrational state for these two models are calculated. The differ- ence between two kinds of density of state will provide useful information for final identifi- cation of the configuration of EL2.