%0 Journal Article
%T THE DENSITIES OF VIBRATIONAL STATE FOR CONFIGURATION MODELS OF DEEP LEVEL NATIVE DEFECT EL2 IN GaAs<br>砷化镓中EL2深能级结构模型的晶格振动态密度
%A Xu Wenlan
%A <br>徐文兰
%J 红外与毫米波学报
%D 1992
%I Science Press
%X Two current configuration models of deep level native defect EL2 in GaAs, i.e. pair model As_(Ga)-As_i of Bourgoin and ternary complex As_(Ga)V_(As)V_(Ga) of Zou Yuanxi are in- troduced. The densities of vibrational state for these two models are calculated. The differ- ence between two kinds of density of state will provide useful information for final identifi- cation of the configuration of EL2.
%K GaAS
%K EL2 deep level
%K density of vibrational state<br>砷化镓
%K EL2深能级
%K 晶格
%K 振动态
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=3C5CCF7520DF7ABB60165AE5CBE6B192&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=94C357A881DFC066&sid=23410D0BDB501DF5&eid=5F8BAECF36EB55E2&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0