PERMANENT PHOTOCONDUCTIVITY AND BAND OFFSETS IN PbTe/Pb_(0.88)Sn_(0.12)Te MULTI-QUANTUM WELLS GROWN BY MBE
分子束外延PbTe/Pb_(0.88)Sn_(0.12)Te量子阱持续光电导与导带不连续

The low temperature permanent photoconductivity in PbTe/Pb_(0.88)Sn_(0.12)Te multi-quantum wells grown by molecular beam epitaxy was studied both theoretically and experimentally. The decay of the photoconductivity was analyzed in terms of tunneling-as- sisted electron-trap recombination. The theoretical result agrees with the experimental one. The band offsets of both the 111] valley and the others at PbTe/Pb_(0.88)Sn_(0.12)Te interfaces were estimated by fitting the calculated decay curve of the photoconductivity to the experi- ment data.