%0 Journal Article
%T PERMANENT PHOTOCONDUCTIVITY AND BAND OFFSETS IN PbTe/Pb_(0.88)Sn_(0.12)Te MULTI-QUANTUM WELLS GROWN BY MBE<br>分子束外延PbTe/Pb_(0.88)Sn_(0.12)Te量子阱持续光电导与导带不连续
%A Song Hang
%A Chen Weili
%A Shi Zhisheng
%A Fu Yi
%A <br>宋航
%A 陈伟立
%A 史智盛
%A 傅义
%J 红外与毫米波学报
%D 1992
%I Science Press
%X The low temperature permanent photoconductivity in PbTe/Pb_(0.88)Sn_(0.12)Te multi-quantum wells grown by molecular beam epitaxy was studied both theoretically and experimentally. The decay of the photoconductivity was analyzed in terms of tunneling-as- sisted electron-trap recombination. The theoretical result agrees with the experimental one. The band offsets of both the 111] valley and the others at PbTe/Pb_(0.88)Sn_(0.12)Te interfaces were estimated by fitting the calculated decay curve of the photoconductivity to the experi- ment data.
%K PbTe/PbSnTe
%K molecular beam epitaxy
%K photoconductivity
%K tunneling-assisted recombination<br>PbTe/PbSnTe
%K 分子束外延
%K 光电导
%K 隧穿复合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=FC9DB8A30A68FF81661B1002EE95E2F2&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=94C357A881DFC066&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0