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红外与毫米波学报 1995
GROWTH AND CHARACTERIZATION OF Hg_(1-x)Cd_x Te LPE FILMS
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Abstract:
The liquid phase epitaxy (LPE) growth of Hg1-xCdxTe from Te-rich solution in a vertical dipping reactor system is reported.X-ray double-crystal diffraction and IR transmittance spectra were used for the characterization of the quality of epilayers.It is seen that the Hg vapor pressure,degree of supercooling,cooling rate and annealing condition affect the properties of grown layers.The degree of mismatch and the x-value of epilayer can be derived quantitatively from the X-ray rocking curve,while the longitudinal composition profile of the epilayer is determined from the room temperature infrared transmission.
