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红外与毫米波学报 1991
INFRARED STUDY ON RADIATION DEFECTS IN CZ-Si
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Abstract:
The infrared study on oxygen-defect oomplexes in electron-irradiated and neutron-inradiated CZ-Si containing high carbon are reported. The annealing behavior of electron irradiation induced 830cm~(-1) band transforming to 889, 904, 969, 986 1000 and 1006cm~(-1) bands supports the multiple oxygen-defect complexes model previously proposed by Corbett and Stein. The broadening of neutron irradiation induced 830cm~(-1) band during annealing is due to the presence of satellite bands 842, 834, and 827cm~(-1) whese configuration is similar to that of 830cm~(-1) band. Three defect models are tentatively proposed to account for these satellite bands.
