%0 Journal Article
%T INFRARED STUDY ON RADIATION DEFECTS IN CZ-Si<br>CZ—Si辐照缺陷的红外研究
%A QI MINGWEI
%A SHI TIANSHENG
%A CAI PEIXING
%A <br>祁明维
%A 施天生
%J 红外与毫米波学报
%D 1991
%I Science Press
%X The infrared study on oxygen-defect oomplexes in electron-irradiated and neutron-inradiated CZ-Si containing high carbon are reported. The annealing behavior of electron irradiation induced 830cm~(-1) band transforming to 889, 904, 969, 986 1000 and 1006cm~(-1) bands supports the multiple oxygen-defect complexes model previously proposed by Corbett and Stein. The broadening of neutron irradiation induced 830cm~(-1) band during annealing is due to the presence of satellite bands 842, 834, and 827cm~(-1) whese configuration is similar to that of 830cm~(-1) band. Three defect models are tentatively proposed to account for these satellite bands.
%K infrared spectra
%K radiation effects
%K silicon (Si)<br>红外光谱
%K 辐照效应
%K 缺陷
%K 硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=D6CAB7F8BABA1CD5F38360EDCA4E3A30&yid=116CB34717B0B183&vid=F3090AE9B60B7ED1&iid=CA4FD0336C81A37A&sid=27746BCEEE58E9DC&eid=16D8618C6164A3ED&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0