%0 Journal Article %T INFRARED STUDY ON RADIATION DEFECTS IN CZ-Si
CZ—Si辐照缺陷的红外研究 %A QI MINGWEI %A SHI TIANSHENG %A CAI PEIXING %A
祁明维 %A 施天生 %J 红外与毫米波学报 %D 1991 %I Science Press %X The infrared study on oxygen-defect oomplexes in electron-irradiated and neutron-inradiated CZ-Si containing high carbon are reported. The annealing behavior of electron irradiation induced 830cm~(-1) band transforming to 889, 904, 969, 986 1000 and 1006cm~(-1) bands supports the multiple oxygen-defect complexes model previously proposed by Corbett and Stein. The broadening of neutron irradiation induced 830cm~(-1) band during annealing is due to the presence of satellite bands 842, 834, and 827cm~(-1) whese configuration is similar to that of 830cm~(-1) band. Three defect models are tentatively proposed to account for these satellite bands. %K infrared spectra %K radiation effects %K silicon (Si)
红外光谱 %K 辐照效应 %K 缺陷 %K 硅 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=D6CAB7F8BABA1CD5F38360EDCA4E3A30&yid=116CB34717B0B183&vid=F3090AE9B60B7ED1&iid=CA4FD0336C81A37A&sid=27746BCEEE58E9DC&eid=16D8618C6164A3ED&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0