PLANAR InGaAs/InP PIN PHOTODETECTORS GROWN BY MOCVD
MOCVD生长的平面型InGaAs／InP PIN光电探测器件

The optical characteristics and fabrication process of planar InGaAs/InP PIN devices grown by MOCVD are discussed in this paper. After growing an InP window layer on the InGaAs absorption layer and fabricating an appropriate antireflection coating, the quantum efficiency of.the planar PIN devices increases obviously, reaching approximately 96%. At the same time, the stability and reliability of the devices may be improved because of using the planar structure.