%0 Journal Article
%T PLANAR InGaAs/InP PIN PHOTODETECTORS GROWN BY MOCVD<br>MOCVD生长的平面型InGaAs／InP PIN光电探测器件
%A YANG ZHIHONG
%A WANG SHUTANG
%A ZHEN JIN
%A ZHU LONGDE
%A SHUN JIE
%A XIA CHAIHONG
%A SHEN RONG
%A GUI QIANG
%A <br>杨志鸿
%A 王树堂
%J 红外与毫米波学报
%D 1993
%I Science Press
%X The optical characteristics and fabrication process of planar InGaAs/InP PIN devices grown by MOCVD are discussed in this paper. After growing an InP window layer on the InGaAs absorption layer and fabricating an appropriate antireflection coating, the quantum efficiency of.the planar PIN devices increases obviously, reaching approximately 96%. At the same time, the stability and reliability of the devices may be improved because of using the planar structure.
%K planar PIN
%K device characteristics
%K quantum efficiency<br>量子效率
%K PIN结探测器
%K 稳定性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=23CD55105145656A82F3406D5DF21D8D&yid=D418FDC97F7C2EBA&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=7CE3F1F20DE6B307&eid=4C100B7696CE9E24&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0