EFFECTS OF GaAs,Ga3+ AND Ge4+ IN WASTE WATER ON ACTIVITIES OF DEHYDROGENASES OF ACTIVATED SLUDGE
废水中GaAs、Ga3+、Ge4+对活性污泥脱氢酶的影响及其抑制动力学

The effects of GaAs, Ga3+ and Ge4+ in wastewater from semiconductor material production on the activities of dehydrogenases of activated sludge (MLSS of 2000 mg/L) were studied. The concentrations for 10% inhibition were 0.13, 45, 371 and 63 ppm/g MLSS for Hg2+, GaAs, Ga3+ and Ge4+, respectively. The 50% inhibition produced by Hg2+ at 2.7 ppm/gMLSS,25% by GaAs at 170ppm/gMLSS and Ge4+ at 228ppm/gMLSS. No competitive effects was found for the four inhibitors. The inhibition constants(Ki) of Hg2+, GaAs, Ga3+ and Ge4+ were 5.49×10-3 mmo1(1.25ppm/gMLSS), 1.30 mmol (180ppm/gMLSS), 7.05 mmol (700ppm/gMLSS) and 6.12mmol (250 ppm/gMLSS), respectively.