%0 Journal Article
%T EFFECTS OF GaAs,Ga3+ AND Ge4+ IN WASTE WATER ON ACTIVITIES OF DEHYDROGENASES OF ACTIVATED SLUDGE<br>废水中GaAs、Ga3+、Ge4+对活性污泥脱氢酶的影响及其抑制动力学
%A Miao Su
%A Ye Zhaojie
%A <br>缪甦
%A 叶兆杰
%J 环境科学学报
%D 1991
%I 
%X The effects of GaAs, Ga3+ and Ge4+ in wastewater from semiconductor material production on the activities of dehydrogenases of activated sludge (MLSS of 2000 mg/L) were studied. The concentrations for 10% inhibition were 0.13, 45, 371 and 63 ppm/g MLSS for Hg2+, GaAs, Ga3+ and Ge4+, respectively. The 50% inhibition produced by Hg2+ at 2.7 ppm/gMLSS,25% by GaAs at 170ppm/gMLSS and Ge4+ at 228ppm/gMLSS. No competitive effects was found for the four inhibitors. The inhibition constants(Ki) of Hg2+, GaAs, Ga3+ and Ge4+ were 5.49×10-3 mmo1(1.25ppm/gMLSS), 1.30 mmol (180ppm/gMLSS), 7.05 mmol (700ppm/gMLSS) and 6.12mmol (250 ppm/gMLSS), respectively.
%K Semiconductor material
%K wastewater
%K dehydrogenase
%K activated sludge
%K inhibition<br>污水处理
%K 半导体材料
%K 活性污泥
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=3FF3ABA7486768130C3FF830376F43B398E0C97F0FF2DD53&cid=A7CA601309F5FED03C078BCE383971DC&jid=03A55E61A8750ACAC6AF81EF9E2AC838&aid=9D60C044F8835C485E701B0612AC9F31&yid=116CB34717B0B183&vid=708DD6B15D2464E8&iid=38B194292C032A66&sid=03E56C113B4E5A88&eid=6490F0E20C4B41AD&journal_id=0253-2468&journal_name=环境科学学报&referenced_num=1&reference_num=5