Characteristic Analysis and Preparation of GaN Film by Sol-gel Method
GaN薄膜的溶胶-凝胶法制备及其表征

Thin GaN films were successfully deposited on Si(111) substrates by the Sol-gel technique,which is simple and cost-effective in the preparation of epitaxial films.The precursor sol was prepared when Gallium metal was used as Ga source and citric acid as complexing agent.The as-prepared films were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction and selected diffraction.X-ray photoelectron energy spectroscopy in the surface of the films proves that Gallium and Nitrogen element...