%0 Journal Article
%T Characteristic Analysis and Preparation of GaN Film by Sol-gel Method<br>GaN薄膜的溶胶-凝胶法制备及其表征
%A WANG Shan-shan
%A WANG Xue-wen
%A YAN Jun-feng
%A DENG Zhou-hu
%A DUAN Xiao-feng
%A ZHAO Wu
%A ZHANG Zhi-yong
%A <br>王珊珊
%A 王雪文
%A 阎军峰
%A 邓周虎
%A 段晓峰
%A 赵武
%A 张志勇
%J 光子学报
%D 2009
%I 
%X Thin GaN films were successfully deposited on Si(111) substrates by the Sol-gel technique,which is simple and cost-effective in the preparation of epitaxial films.The precursor sol was prepared when Gallium metal was used as Ga source and citric acid as complexing agent.The as-prepared films were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction and selected diffraction.X-ray photoelectron energy spectroscopy in the surface of the films proves that Gallium and Nitrogen element...
%K GaN flims
%K Sol-gel
%K Hexangular wurtzite structure<br>氮化镓薄膜
%K 溶胶-凝胶
%K 六角纤锌矿结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=6D9281A6D1CCD9BB9994B48C1ABFF8CD&yid=DE12191FBD62783C&vid=16D8618C6164A3ED&iid=CA4FD0336C81A37A&sid=73579BC9CFB2D787&eid=0584DB487B4581F4&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=14