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光子学报  2007 

Design and Fabrication of High Reflection Multilayer for the Wavelength Range 50~110 nm
50~110 nm波段高反射率多层膜的设计与制备

Keywords: Sub-quarter-wave,Multilayer,EUV,Reflectivity,Magnetron sputtering
亚四分之一波长
,多层膜,极紫外,高反射率,磁控溅射

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Abstract:

A design method of sub-quarter-wave multilayers with enhanced normal reflectance in the strong absorbing range 50~110 nm has been presented.The multilayers consisted in the superposition of a few layers of strong absorbing materials.The optical thickness of each layer in the multilayers is less than quarter-wave thickness.Compared to the standard multilayers,this multilayer structure more suits to enhance reflectance of strong absorbing wavelength range.High reflectance multilayers Si/W/Co was designed at wavelength of 50 nm by using this method,and then optimized based on this initial condition by using Levenberg-Marquart algorithm in a wide wavelength range 50~110 nm.The calculated results suggest that the reflectance of the multilayer is as high as 45%.The sample was fabricated by using a high vacuum direct current magnetron sputtering.Then,the multilayer was characterized by a low angle X-ray diffraction.The results suggest that the fabricated multilayer structure meets the design requirement.

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