Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction
HgCdTe器件中载流子扩散长度的硼离子注入效应研究

The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current.The n-type region is larger than the actually boron-implanted area.The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile.The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side.