%0 Journal Article
%T Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction<br>HgCdTe器件中载流子扩散长度的硼离子注入效应研究
%A CHEN Gui-bin
%A QUAN Zhi-jue
%A WANG Shao-wei
%A LU Wei
%A <br>陈贵宾
%A 全知觉
%A 王少伟
%A 陆卫
%J 光子学报
%D 2007
%I 
%X The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current.The n-type region is larger than the actually boron-implanted area.The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile.The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side.
%K Ion implantation
%K p-n junction
%K Diffusion length
%K Laser Beam Induced Current (LBIC)<br>离子注入
%K p-n结
%K 激光束诱导电流谱(LBIC)
%K 扩散长度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=CD2A4062490663249EF92024C6EAA02B&yid=A732AF04DDA03BB3&vid=933658645952ED9F&iid=E158A972A605785F&sid=240CB58995465C01&eid=4720E9D07E8A2290&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=11