Study of the Energy Levels Distributions in Super Lattice I in Potential well and the Regulation of the Electronics Jump
Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

Based on the study of a great deal of the experiment curves,the current study points out that all the energy levels in potential well have a certain width and the probability of the appearance of the electronics or holes in each energy level matches the normal distribution,and analyses the luminescent spectrum and absorption spectrum of Superlattice I and single potential well with double barrier theoretically,explains the absorption sides of the absorption spectrum in both the GaAs/Ga1－xAlxAs multiquantum wells and Superlattice and the“blue move” of each absorption peaks when the quantum well narrowing down. Furthermore,discusses the electric current-voltage and the conductance-voltage characteristic of the GaAs/Ga1-x.AlxAs single potential well sample with double barrier and the “negative resistance effect”.