%0 Journal Article
%T Study of the Energy Levels Distributions in Super Lattice I in Potential well and the Regulation of the Electronics Jump<br>Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究
%A 刘晓燕
%A 吕惠民
%J 光子学报
%D 2006
%I 
%X Based on the study of a great deal of the experiment curves,the current study points out that all the energy levels in potential well have a certain width and the probability of the appearance of the electronics or holes in each energy level matches the normal distribution,and analyses the luminescent spectrum and absorption spectrum of Superlattice I and single potential well with double barrier theoretically,explains the absorption sides of the absorption spectrum in both the GaAs/Ga1－xAlxAs multiquantum wells and Superlattice and the“blue move” of each absorption peaks when the quantum well narrowing down. Furthermore,discusses the electric current-voltage and the conductance-voltage characteristic of the GaAs/Ga1-x.AlxAs single potential well sample with double barrier and the “negative resistance effect”.
%K Ssuperlattice
%K Single potential well
%K AbsOrption spectrum
%K Blue move
%K Tunneling effect<br>超晶格
%K 单势阱
%K 吸收光谱
%K 蓝移
%K 隧道效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=F09A038C84666194&yid=37904DC365DD7266&vid=6209D9E8050195F5&iid=59906B3B2830C2C5&sid=1744D1F6FFC838D2&eid=EECD17CB3E221F65&journal_id=1004-4213&journal_name=光子学报&referenced_num=2&reference_num=13