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光子学报  2005 

Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror
用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模

Keywords: Semiconductor saturable absorption mirror,Surface state,Q-switched modelocking,Yb∶ YAG laser
半导体可饱和吸收镜
,表面态,调Q锁模,Yb:YAG激光器

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Abstract:

A new type of surface-state semiconductor saturable absorption mirror was introduced, with which passive Q-switched modelocking of diode-end-pumped Yb∶ YAG laser was realized. At the 1.4 W of pumping power, Q-switched modelocking seires was obtained, which has 1 mW average output and 200 MHz frequency.

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