%0 Journal Article
%T Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror<br>用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模
%A 王勇刚
%A 马骁宇
%A 居桂方
%A 张志刚
%J 光子学报
%D 2005
%I 
%X A new type of surface-state semiconductor saturable absorption mirror was introduced, with which passive Q-switched modelocking of diode-end-pumped Yb∶ YAG laser was realized. At the 1.4 W of pumping power, Q-switched modelocking seires was obtained, which has 1 mW average output and 200 MHz frequency.
%K Semiconductor saturable absorption mirror
%K Surface state
%K Q-switched modelocking
%K Yb∶ YAG laser<br>半导体可饱和吸收镜
%K 表面态
%K 调Q锁模
%K Yb：YAG激光器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=62321858EEC98F95&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=CA4FD0336C81A37A&sid=708DD6B15D2464E8&eid=FC0714F8D2EB605D&journal_id=1004-4213&journal_name=光子学报&referenced_num=8&reference_num=8