|
|
光子学报 1996
GROWTH OF InP BY MOVPE
|
Abstract:
InP epitaxial layer has been grown by home made atmospheric pressure.MOVPE equipment with domestic trimethylindium and imported phosphine.Its mobility at 77 K is 65300 cm2/V.s,which is the highest low-temperature mobility of InP grown by any method up to now in Cmna.
