%0 Journal Article
%T GROWTH OF InP BY MOVPE<br>InP的MOVPE生长
%A Liu Xianglin
%A Lu Dacheng
%A Wang Xiaohui
%A Wang Du
%A Dong Jianrong
%A <br>刘祥林
%A 陆大成
%A 王晓晖
%A 汪度
%A 董建荣
%J 光子学报
%D 1996
%I 
%X InP epitaxial layer has been grown by home made atmospheric pressure.MOVPE equipment with domestic trimethylindium and imported phosphine.Its mobility at 77 K is 65300 cm2/V.s,which is the highest low-temperature mobility of InP grown by any method up to now in Cmna.
%K MOVPE
%K InP
%K Mobility<br>MOVPE
%K InP
%K 迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=E79FB1C76F7EE322BA06244A884EF0E5&yid=8A15F8B0AA0E5323&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=D59111839E7C8BDF&eid=3F0AF5EDBC960DB0&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=0