Study of the electric characteristics and radiation response of 6h-sic mos structure
6H－SiC MOS结构电特性及其辐照效应的研究

The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to 7 rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si).