%0 Journal Article
%T Study of the electric characteristics and radiation response of 6h-sic mos structure<br>6H－SiC MOS结构电特性及其辐照效应的研究
%A Shang Yechun
%A Zhang Yirnen
%A Zhang Yuming
%A Liu Zhongli
%A <br>尚也淳
%A 张义门
%A 张玉明
%A 刘忠立
%J 电子与信息学报
%D 2003
%I 
%X The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to 7 rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si).
%K SiC MOS structure
%K Radiation
%K Flat-band voltage
%K Annealing<br>6H－SiC
%K MOS结构
%K 电特性
%K 辐照效应
%K 平带电压
%K 退火
%K 漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=DA4699C1F0066717&yid=D43C4A19B2EE3C0A&vid=C5154311167311FE&iid=38B194292C032A66&sid=40862C82D74F7473&eid=0BD4FAD4A90498AB&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8