THE ENERGY BANDS CALCULATION OF InGaAs(P)/InP STRAINED QUANTUM WELL AND THE SELECTION OF MATERIAL IN QUANTUM WELL
InGaAs（P）／InP应变量子阱能带计算和有源区材料的选择

The valence subbands and energy levels of strained quantum well have been calculated theoretically by K. P method and deformation-potential approximation. When the emit wavelength is fixed and the well material is InGaAs and under compressed strain, we found that the strain and the well width might select singly. When selecting InGaAsP as well material, this surmounted the difficult that well width is narrower as copressed strain is larger when the well material is InGaAs. But when strain is biaxial tension, it is preferential that select InGaAs as well material.