%0 Journal Article
%T THE ENERGY BANDS CALCULATION OF InGaAs(P)/InP STRAINED QUANTUM WELL AND THE SELECTION OF MATERIAL IN QUANTUM WELL<br>InGaAs（P）／InP应变量子阱能带计算和有源区材料的选择
%A Liu Baolin
%A Liu Shiyong
%A <br>刘宝林
%A 刘式墉
%J 光子学报
%D 1993
%I 
%X The valence subbands and energy levels of strained quantum well have been calculated theoretically by K. P method and deformation-potential approximation. When the emit wavelength is fixed and the well material is InGaAs and under compressed strain, we found that the strain and the well width might select singly. When selecting InGaAsP as well material, this surmounted the difficult that well width is narrower as copressed strain is larger when the well material is InGaAs. But when strain is biaxial tension, it is preferential that select InGaAs as well material.
%K Strain
%K Quantum well
%K Energy band calculation
%K Material in quantum well<br>应变
%K 能带结构算法
%K 光纤通信
%K 材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=2A9D96A8D4D73440717919485DC20A90&yid=D418FDC97F7C2EBA&vid=BC12EA701C895178&iid=0B39A22176CE99FB&sid=DDD31293A7C7D057&eid=2B5DE8A23DCEED39&journal_id=1004-4213&journal_name=光子学报&referenced_num=3&reference_num=3