MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR
低温多晶硅发射极晶体管电流增益模型和模拟

A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data.