%0 Journal Article
%T MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR<br>低温多晶硅发射极晶体管电流增益模型和模拟
%A Huang Liuxing
%A Wei Tongli
%A Zheng Jiang
%A Cao Juncheng
%A <br>黄流兴
%A 魏同立
%A 郑茳
%A 曹俊诚
%J 电子与信息学报
%D 1994
%I 
%X A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data.
%K Bipolar transistor
%K Polysilicon emitter
%K Current gain
%K Low temperature<br>双极晶体管
%K 多晶硅发射极
%K 电流增益
%K 低温
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=DFCF6485174AFF2862C345C5A0A14803&yid=3EBE383EEA0A6494&vid=7801E6FC5AE9020C&iid=0B39A22176CE99FB&sid=334E2BB8B9A55ABB&eid=CC0ECB9C52F1B85F&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=9