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电子与信息学报 1987
SEVERAL PROPERTIES OF Ti IN SILICON
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Abstract:
Some results in investigating deep levels in Ti-doped silicon are given. Three Ti associated deep levels are found by DLTS. They are two electron trap levels located at Ec- 0.23 eV and Ec - 0.53eV respectively in Ti-doped n-silicon and a hole trap level located at Ev +0.32eVin Ti-doped p-silicon. In order to study these levels further, the method of transient capacitance at constant temperature is used, and the thermal activation energy and capture cross-section in the range of experimental temperature and other related parameters are obtained. According to our experimental results, a brief discussion on the bonding feature of these levels and on their pinning to which band is given.
